In this work we show a detailed deep levels analysis (an energy resolution of 50 meV was reached) of a set of medium resistivity silicon samples, irradiated up to a fluence of 2.5x10^15 n/cm2. In order to discriminate the large number of deep levels which appear to overlap their contributions in TSC and I-DLTS spectra, we adopted an innovative numerical procedure of data analysis which determines a set of deep levels that can account for both TSC and I-DLTS spectra. We finally obtained a consistent and detailed description of deep level population, clearly showing its evolution with fluence. Some results seem to suggest the possibility of quasi-continuous distributions of localized states inside the gap.
A Detailed Microscopic Analysis of DeepLevels in Heavily Irradiated-Medium ResistivitySilicon Detectors / D. Menichelli; S. Pirollo; Z. Li. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 47:(2000), pp. 446-451. [10.1109/23.846278]
A Detailed Microscopic Analysis of DeepLevels in Heavily Irradiated-Medium ResistivitySilicon Detectors
MENICHELLI, DAVID;PIROLLO, SILVIA;
2000
Abstract
In this work we show a detailed deep levels analysis (an energy resolution of 50 meV was reached) of a set of medium resistivity silicon samples, irradiated up to a fluence of 2.5x10^15 n/cm2. In order to discriminate the large number of deep levels which appear to overlap their contributions in TSC and I-DLTS spectra, we adopted an innovative numerical procedure of data analysis which determines a set of deep levels that can account for both TSC and I-DLTS spectra. We finally obtained a consistent and detailed description of deep level population, clearly showing its evolution with fluence. Some results seem to suggest the possibility of quasi-continuous distributions of localized states inside the gap.
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