A quantitative comparison among thermal spectroscopy echniques has been carried out to analyse the lattice disorder. For this purpose thermally stimulated capacitance and current (TSCAP, TSC), capacitance and current deep level transient spectroscopy (C-DLTS, I-DLTS) have been applied on a sample irradiated with 5·10^11 p/cm^2. A complete characterisation of the material has been performed comparing the results obtained with the different methods. Numerical procedures have been developed in order to discriminate single deep level contributions to the spectra. The advantages and the limits of each technique are also discussed.
A comparative study of TSC, TSCAP, DLTS analysis in irradiated Si detectors / E. Catacchini; D. Menichelli; S. Pirollo. - In: NUOVO CIMENTO. A. - ISSN 0369-3546. - STAMPA. - 112:(1999), pp. 23-33.
A comparative study of TSC, TSCAP, DLTS analysis in irradiated Si detectors
MENICHELLI, DAVID;PIROLLO, SILVIA
1999
Abstract
A quantitative comparison among thermal spectroscopy echniques has been carried out to analyse the lattice disorder. For this purpose thermally stimulated capacitance and current (TSCAP, TSC), capacitance and current deep level transient spectroscopy (C-DLTS, I-DLTS) have been applied on a sample irradiated with 5·10^11 p/cm^2. A complete characterisation of the material has been performed comparing the results obtained with the different methods. Numerical procedures have been developed in order to discriminate single deep level contributions to the spectra. The advantages and the limits of each technique are also discussed.
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