We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at 400 C without major changes in their morphology, thus enabling an AlGaAs capping layer to be grown at that temperature. Consequently, we demonstrate a fourfold reduction of the linewidth of the emission together with an increased recombination lifetime, compared to the conventional droplet epitaxial QDs. The averaged linewidth of neutral excitons measured by micro-photoluminescence on single quantum dots was around 35 μeV.

Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy / T.Mano; M.Abbarchi; T Kuroda; C. A. Mastrandrea; A. Vinattieri; S. Sanguinetti; K. Sakoda; M Gurioli. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - STAMPA. - 20:(2009), pp. 395601-1-395601-5. [10.1088/0957-4484/20/39/395601]

Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy

VINATTIERI, ANNA;GURIOLI, MASSIMO
2009

Abstract

We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at 400 C without major changes in their morphology, thus enabling an AlGaAs capping layer to be grown at that temperature. Consequently, we demonstrate a fourfold reduction of the linewidth of the emission together with an increased recombination lifetime, compared to the conventional droplet epitaxial QDs. The averaged linewidth of neutral excitons measured by micro-photoluminescence on single quantum dots was around 35 μeV.
2009
20
395601-1
395601-5
T.Mano; M.Abbarchi; T Kuroda; C. A. Mastrandrea; A. Vinattieri; S. Sanguinetti; K. Sakoda; M Gurioli
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/361373
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