We report a detailed experimental investigation of the power dependence of excitonic complexes neutral exciton, neutral biexciton, and charged exciton confined in single selfassembled GaAs/AlGaAs strain-free quantum dots grown by droplet epitaxy. By using the random population theory we show that, under stationary excitation, the power dependence of the excitonic complexes precisely follows the Poissonian statistics. This result allows us to determine with great accuracy the state filling condition of the quantum dots QDs and therefore to estimate the capture volume of the QDs.

Poissonian statistics of excitonic complexes in quantum dots / M. Abbarchi; C. Mastrandrea; T. Kuroda; T. Mano; A. Vinattieri; K. Sakoda; M. Gurioli. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 106:(2009), pp. 053504-1-053504-6. [10.1063/1.3197848]

Poissonian statistics of excitonic complexes in quantum dots

ABBARCHI, MARCO;VINATTIERI, ANNA;GURIOLI, MASSIMO
2009

Abstract

We report a detailed experimental investigation of the power dependence of excitonic complexes neutral exciton, neutral biexciton, and charged exciton confined in single selfassembled GaAs/AlGaAs strain-free quantum dots grown by droplet epitaxy. By using the random population theory we show that, under stationary excitation, the power dependence of the excitonic complexes precisely follows the Poissonian statistics. This result allows us to determine with great accuracy the state filling condition of the quantum dots QDs and therefore to estimate the capture volume of the QDs.
106
053504-1
053504-6
M. Abbarchi; C. Mastrandrea; T. Kuroda; T. Mano; A. Vinattieri; K. Sakoda; M. Gurioli
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2158/361374
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