The different steps of an assembly process of NAND flash memories could cause thermal or mechanical stresses that induce faults in their programming. We analyzed the probably faults and to solve he problems found we indicated the interesting parameters and implemented a DOE (design of experiments) as an instrument to plan the laboratory tests. The flash memories under test are pb-free and our trials shown an improvement when a new conductive silver glue is used in he assembly process.
A novel approach to thermal tests for flash memories reliability improvement based on DoE method / G.Bacis; M.Catelani; L.Ciani; V.Scarano; R.Singuaroli. - STAMPA. - (2007), pp. 1-4. (Intervento presentato al convegno 2007 IEEE Instrumentation and Measurement Technology, IMTC 2007 - Synergy of Science and Technology in Instrumentation and Measurement tenutosi a Warsaw (Poland) nel 2007) [10.1109/IMTC.2007.379240].
A novel approach to thermal tests for flash memories reliability improvement based on DoE method
CATELANI, MARCANTONIO;CIANI, LORENZO;R. Singuaroli
2007
Abstract
The different steps of an assembly process of NAND flash memories could cause thermal or mechanical stresses that induce faults in their programming. We analyzed the probably faults and to solve he problems found we indicated the interesting parameters and implemented a DOE (design of experiments) as an instrument to plan the laboratory tests. The flash memories under test are pb-free and our trials shown an improvement when a new conductive silver glue is used in he assembly process.I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.