This paper presents an investigation of a concurrent low-cost dual-band power amplifier (PA) fabricated in SiGe technology, able to simultaneously operate at two frequencies of 2.45 and 3.5-GHz, including an evaluation of its system level performance potentiality. Taking into account the technology novelty and the lack of device characterization and modeling, a hybrid (MIC) approach has been adopted both for a fast prototyping of the PA and for the evaluation of the device potentiality based on an extensive linear and nonlinear characterization. The comparison of PA performance in single-band or concurrent mode operation will be presented. In particular, the measured PA prototype shows an output power of 17.2 and 17-dBm at a 1-dB compression point, at 2.45 and 3.5-GHz, respectively, for CW single-mode operation, with a power added efficiency around 20%. System-level analysis predicts that, when the PA is operated under the 20-MHz Orthogonal Frequency-Division Multiplexing (OFDM) concurrent signals, the maximum output power levels to maintain the Error Vector Magnitude (EVM) within 5% are 11 and 3.5-dBm at 2.45 and 3.5-GHz, respectively. Moreover, new concepts and possible new system architectures for the development of the next generation of the multi-band transceiver front-end will be provided with an extensive system-level evaluation of the amplifier.

Concurrent dual-band SiGe HBT power amplifier for Wireless applications / V. Camarchia; R. Giofré; I. Magrini; L. Piazzon; A. Cidronali; P. Colantonio; S. Donati Guerrieri; G. Ghione; F. Giannini; M. Pirola; G. Manes. - In: INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES. - ISSN 1759-0787. - STAMPA. - 1:(2009), pp. 117-126. [10.1017/S1759078709000087]

Concurrent dual-band SiGe HBT power amplifier for Wireless applications

MAGRINI, IACOPO;CIDRONALI, ALESSANDRO;MANES, GIANFRANCO
2009

Abstract

This paper presents an investigation of a concurrent low-cost dual-band power amplifier (PA) fabricated in SiGe technology, able to simultaneously operate at two frequencies of 2.45 and 3.5-GHz, including an evaluation of its system level performance potentiality. Taking into account the technology novelty and the lack of device characterization and modeling, a hybrid (MIC) approach has been adopted both for a fast prototyping of the PA and for the evaluation of the device potentiality based on an extensive linear and nonlinear characterization. The comparison of PA performance in single-band or concurrent mode operation will be presented. In particular, the measured PA prototype shows an output power of 17.2 and 17-dBm at a 1-dB compression point, at 2.45 and 3.5-GHz, respectively, for CW single-mode operation, with a power added efficiency around 20%. System-level analysis predicts that, when the PA is operated under the 20-MHz Orthogonal Frequency-Division Multiplexing (OFDM) concurrent signals, the maximum output power levels to maintain the Error Vector Magnitude (EVM) within 5% are 11 and 3.5-dBm at 2.45 and 3.5-GHz, respectively. Moreover, new concepts and possible new system architectures for the development of the next generation of the multi-band transceiver front-end will be provided with an extensive system-level evaluation of the amplifier.
2009
1
117
126
V. Camarchia; R. Giofré; I. Magrini; L. Piazzon; A. Cidronali; P. Colantonio; S. Donati Guerrieri; G. Ghione; F. Giannini; M. Pirola; G. Manes...espandi
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/364334
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