Current and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some detectors were cut 0�� off the h1 1 1i axis and some off the h1 0 0i axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes. A degradation of the energy and risetime resolution of about a factor ��3 with respect to the measured optimal values (for example 7�� off-axis orientation) is observed for ion impinging directions close to crystal axes and/or planes, i.e. the common scenario for normal incidence on 0�� cut detectors. For Pulse Shape Analysis applications, the necessity of using such ‘‘random’’ oriented silicon detectors is demonstrated.

Influence of crystal-orientation effects on pulse-shape-based identification of heavy-ions stopped in silicon detectors / L.Bardelli; M.Bini; G.Casini; G.Pasquali; G.Poggi; S.Barlini; A.Becla; R.Berjillos; B.Borderie; R.Bougault; M.Bruno; M.Cinausero; M.D’Agostino; J.DeSanctis; J.A.Duenas; P.Edelbruck; E.Geraci; F.Gramegna; A.Kordyasz; T.Kozik; V.L.Kravchuk; L.Lavergne; P.Marini; A.Nannini; F.Negoita; A.Olmi; A.Ordine; S.Piantelli; E.Rauly; M.F.Rivet; E. Rosato; C.Scian; A.A.Stefanini; G. Vannini; S.Velica; M.Vigilante. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 605:(2009), pp. 353-358. [10.1016/j.nima.2009.03.247]

Influence of crystal-orientation effects on pulse-shape-based identification of heavy-ions stopped in silicon detectors

BARDELLI, LUIGI;BINI, MAURIZIO;CASINI, GIOVANNI;PASQUALI, GABRIELE;POGGI, GIACOMO;BARLINI, SANDRO;A. Nannini;OLMI, ALESSANDRO;STEFANINI, ANDREA;
2009

Abstract

Current and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some detectors were cut 0�� off the h1 1 1i axis and some off the h1 0 0i axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes. A degradation of the energy and risetime resolution of about a factor ��3 with respect to the measured optimal values (for example 7�� off-axis orientation) is observed for ion impinging directions close to crystal axes and/or planes, i.e. the common scenario for normal incidence on 0�� cut detectors. For Pulse Shape Analysis applications, the necessity of using such ‘‘random’’ oriented silicon detectors is demonstrated.
605
353
358
L.Bardelli; M.Bini; G.Casini; G.Pasquali; G.Poggi; S.Barlini; A.Becla; R.Berjillos; B.Borderie; R.Bougault; M.Bruno; M.Cinausero; M.D’Agostino; J.DeSanctis; J.A.Duenas; P.Edelbruck; E.Geraci; F.Gramegna; A.Kordyasz; T.Kozik; V.L.Kravchuk; L.Lavergne; P.Marini; A.Nannini; F.Negoita; A.Olmi; A.Ordine; S.Piantelli; E.Rauly; M.F.Rivet; E. Rosato; C.Scian; A.A.Stefanini; G. Vannini; S.Velica; M.Vigilante
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2158/370372
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