The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are derived.
Determination of the charge collection efficiency in neutron irradiated silicon detectors / M.K.Petterson; R.F. Hurley; K. Arya; C. Betancourt; M. Bruzzi; B. Colby; M. Gerling; C. Meyer; J. Pixley; T. Rice; H.F.W. Sadrozinski; M. Scaringella; J. Bernardini; L. Borrello; F. Fiori; A. Messineo. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 56:(2009), pp. 3828-3833. [10.1109/TNS.2009.2033995]
Determination of the charge collection efficiency in neutron irradiated silicon detectors
BRUZZI, MARA;SCARINGELLA, MONICA;
2009
Abstract
The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are derived.
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