The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.

Multifinger effect in GaAs FET distributed large signal CAD model / G.Avitabile; A. Cidronali; G. Vannini; G. Manes. - STAMPA. - (1996), pp. 159-162. (Intervento presentato al convegno International Electron Devices Meeting, 1996. IEDM '96 tenutosi a San francisco (CA) USA) [10.1109/IEDM.1996.553145].

Multifinger effect in GaAs FET distributed large signal CAD model

CIDRONALI, ALESSANDRO
;
MANES, GIANFRANCO
1996

Abstract

The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.
1996
Proceedings of the 1996 IEEE International Electron Devices Meeting
International Electron Devices Meeting, 1996. IEDM '96
San francisco (CA) USA
G.Avitabile; A. Cidronali; G. Vannini; G. Manes
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/392623
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