The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.
Multifinger effect in GaAs FET distributed large signal CAD model / G.Avitabile; A. Cidronali; G. Vannini; G. Manes. - STAMPA. - (1996), pp. 159-162. (Intervento presentato al convegno International Electron Devices Meeting, 1996. IEDM '96 tenutosi a San francisco (CA) USA) [10.1109/IEDM.1996.553145].
Multifinger effect in GaAs FET distributed large signal CAD model
CIDRONALI, ALESSANDRO
;MANES, GIANFRANCO
1996
Abstract
The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.
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