The monolithic integration of Tunneling Diodes (TDs) with other conventional semiconductor devices, gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic Negative Differential Resistance (NDR) of TDs. In this paper we present the design of a Differential Oscillator based on InPHEMTTD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of l.lmA at 500mV and generates an output power of -9.0 dBm on a 50n load.
Ultra low DC power consumption In-P HITFET based differential oscillator / M. Camprini; A. Cidronali; I. Magrini; G. Collodi; L. Costanzo; G. Manes. - STAMPA. - 1:(2004), pp. 171-174. (Intervento presentato al convegno 12th IEEE Mediterranean Electrotechnical Conference, 2004. MELECON 2004. tenutosi a Dubrovnik, Croatia nel 12-15 May 2004) [10.1109/MELCON.2004.1346800].
Ultra low DC power consumption In-P HITFET based differential oscillator
CIDRONALI, ALESSANDRO
Conceptualization
;MAGRINI, IACOPO;COLLODI, GIOVANNIMembro del Collaboration Group
;MANES, GIANFRANCO
2004
Abstract
The monolithic integration of Tunneling Diodes (TDs) with other conventional semiconductor devices, gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic Negative Differential Resistance (NDR) of TDs. In this paper we present the design of a Differential Oscillator based on InPHEMTTD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of l.lmA at 500mV and generates an output power of -9.0 dBm on a 50n load.
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