This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation. The analysis is based on an accurate distributed model modified in order to take into account for the dynamic thermal behaviour under large signal operation. The results show a reduction of the intermodulation product in response to a reduction of the two tones frequency spacing, in agreement with the analytical treatment.
Thermal Memory Effects on the Linearity of a GaAs PHEMT / Accillaro, C. ; Cidronali, A. ; Zani, F. ; Loglio, G. ; Usai, M. ; Collodi, G. ; Camprini, M. ; Magrini, I. ; Manes, G.. - STAMPA. - (2004), pp. 115-118. (Intervento presentato al convegno Gallium Arsenide applications symposium. GAAS 2004 tenutosi a Amsterdam nel 11—12 Ottobre).
Thermal Memory Effects on the Linearity of a GaAs PHEMT
COLLODI, GIOVANNI;MAGRINI, IACOPO;MANES, GIANFRANCO;
2004
Abstract
This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation. The analysis is based on an accurate distributed model modified in order to take into account for the dynamic thermal behaviour under large signal operation. The results show a reduction of the intermodulation product in response to a reduction of the two tones frequency spacing, in agreement with the analytical treatment.
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