The paper highlights some of the newest results achieved in the framework of the transmitter modeling for wideband access transmitters work package within the IST-EU network of excellence TARGET. Two cases of study have been considered to discuss the outcome, namely the IEEE 802.11a WLAN and the IEEE 802.15.3a UWB. A specific discussion about the subsystem modeling requirements in terms of key parameters allow the construction of subsystem models capable of numerical efficiency and accuracy. The subsequent insertion of such subsystem behavioral models allows fast and accurate co-simulations of complete transmitters for the performance investigation.

TX system-level analysis by behavioral modeling of RF building blocks: the IEEE802.11a and IEEE802.15.3a case studies / Cidronali, A.; Camprini, M.; Magrini, I.; Bertran, E.; Athanasopoulos, N.; Makri, R.; Cignani, R.; Vannini, G.; Portilla, J.; Casas, P.; Vryssas, K.; Samelis, A.; Manes, G.; ,. - STAMPA. - (2005), pp. 333-336. (Intervento presentato al convegno Gallium Arsenide and Other Semiconductor Application Symposium tenutosi a Paris, France nel 3-4 Oct. 2005).

TX system-level analysis by behavioral modeling of RF building blocks: the IEEE802.11a and IEEE802.15.3a case studies

CIDRONALI, ALESSANDRO
;
MAGRINI, IACOPO;MANES, GIANFRANCO;
2005

Abstract

The paper highlights some of the newest results achieved in the framework of the transmitter modeling for wideband access transmitters work package within the IST-EU network of excellence TARGET. Two cases of study have been considered to discuss the outcome, namely the IEEE 802.11a WLAN and the IEEE 802.15.3a UWB. A specific discussion about the subsystem modeling requirements in terms of key parameters allow the construction of subsystem models capable of numerical efficiency and accuracy. The subsequent insertion of such subsystem behavioral models allows fast and accurate co-simulations of complete transmitters for the performance investigation.
2005
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
Gallium Arsenide and Other Semiconductor Application Symposium
Paris, France
3-4 Oct. 2005
Cidronali, A.; Camprini, M.; Magrini, I.; Bertran, E.; Athanasopoulos, N.; Makri, R.; Cignani, R.; Vannini, G.; Portilla, J.; Casas, P.; Vryssas, K.; Samelis, A.; Manes, G.; ,
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/392739
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