This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control scheme. At 2.1 GHz CW the discrete power control technique enables a linear factor 3.3 efficiency enhancement at the maximum power back-off of 7 dB, while a maximum output power of 34 dBm and a peak drain efficiency of 35%.

A 2.14 GHz GaN Power Amplifier with 1-bit Discrete Power Control / M. Mercanti; A. Cidronali; I. Magrini; G. Manes. - STAMPA. - (2010), pp. 240-243. ((Intervento presentato al convegno Radio and Wireless Symposium (RWS), 2010 IEEE tenutosi a New Orleans, LA nel 10-14 Jan. 2010 [10.1109/RWS.2010.5434154].

A 2.14 GHz GaN Power Amplifier with 1-bit Discrete Power Control

MERCANTI, MASSIMILIANO;CIDRONALI, ALESSANDRO;MAGRINI, IACOPO;MANES, GIANFRANCO
2010

Abstract

This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control scheme. At 2.1 GHz CW the discrete power control technique enables a linear factor 3.3 efficiency enhancement at the maximum power back-off of 7 dB, while a maximum output power of 34 dBm and a peak drain efficiency of 35%.
Radio and Wireless Symposium (RWS), 2010 IEEE
New Orleans, LA
10-14 Jan. 2010
M. Mercanti; A. Cidronali; I. Magrini; G. Manes
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2158/393667
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