A singular perturbation problem, modeling one-dimensional time-dependent electrodiffusion of ions (holes and electrons) in a bipolar membrane (semi-conductor diode) at a reverse bias is analyzed for galvanostatic (fixed electric current) conditions. It is shown that, as the perturbation parameter tends to zero, the solution of the perturbed problem tends to the solution of a limiting problem which is, depending on the input data, either a conventional bipolar electrodiffusion problem or a particular electrodiffusional time-dependent free boundary problem. In both cases, the properties of the limiting solution are analyzed, along with those of the respective boundary and transition layer solutions.
ELECTRODIFFUSIONAL FREE BOUNDARY PROBLEMS IN A BIPOLAR MEMBRANE (SEMICONDUCTOR DIODE) AT A REVERSE BIAS FOR CONSTANT CURRENT / M. PRIMICERIO; I. RUBINSTEIN; B. ZALTZMANN. - In: QUARTERLY OF APPLIED MATHEMATICS. - ISSN 0033-569X. - STAMPA. - 57:(1999), pp. 637-659. [10.1090/qam/1724297]
ELECTRODIFFUSIONAL FREE BOUNDARY PROBLEMS IN A BIPOLAR MEMBRANE (SEMICONDUCTOR DIODE) AT A REVERSE BIAS FOR CONSTANT CURRENT
PRIMICERIO, MARIO;
1999
Abstract
A singular perturbation problem, modeling one-dimensional time-dependent electrodiffusion of ions (holes and electrons) in a bipolar membrane (semi-conductor diode) at a reverse bias is analyzed for galvanostatic (fixed electric current) conditions. It is shown that, as the perturbation parameter tends to zero, the solution of the perturbed problem tends to the solution of a limiting problem which is, depending on the input data, either a conventional bipolar electrodiffusion problem or a particular electrodiffusional time-dependent free boundary problem. In both cases, the properties of the limiting solution are analyzed, along with those of the respective boundary and transition layer solutions.
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