Nonradiative recombination processes in thin GaAs/AlxGa1-xAs quantum-well (QW) and double-barrier quantum-well structures have been investigated by means of continuous-wave and time-resolved photoluminescence (PL) measurements. We find that, due to the temperature dependence of the radiative time constant, the Arrhenius plot of the PL intensity cannot be used to extracting the activation energy of the nonradiative channels. In fact it is the temperature dependence of the PL decay time T(L) which directly gives information on the thermal activation of the loss mechanism. The activation energies obtained from the Arrhenius plot of T(L) demonstrate that, at least in the case of thin wells, the main nonradiative mechanism is the thermal escape of the less-confined species of carriers.
Thermal escape of carriers out of GaAs/AlGaAs quantum well structures / M. Gurioli; J. Martinez-Pastor; M. Colocci; C. Deparis; B. Chastaing; J. Massies. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 46:(1992), pp. 6922-6927. [10.1103/PhysRevB.46.6922]
Thermal escape of carriers out of GaAs/AlGaAs quantum well structures
GURIOLI, MASSIMO;COLOCCI, MARCELLO;
1992
Abstract
Nonradiative recombination processes in thin GaAs/AlxGa1-xAs quantum-well (QW) and double-barrier quantum-well structures have been investigated by means of continuous-wave and time-resolved photoluminescence (PL) measurements. We find that, due to the temperature dependence of the radiative time constant, the Arrhenius plot of the PL intensity cannot be used to extracting the activation energy of the nonradiative channels. In fact it is the temperature dependence of the PL decay time T(L) which directly gives information on the thermal activation of the loss mechanism. The activation energies obtained from the Arrhenius plot of T(L) demonstrate that, at least in the case of thin wells, the main nonradiative mechanism is the thermal escape of the less-confined species of carriers.File | Dimensione | Formato | |
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