In the framework of the CERN detector R&D effort in view of future high luminosity colliders, several pixel detector prototypes, both hybrid and monolithic, are being developed. A hybrid matrix of 16 × 64 pixels with a new readout cell is described here, and it will be first used for a test in a heavy-ion experiment. Preliminary results from the application of SOI processes on high resistivity silicon are also presented.
Development of silicon micropattern (pixel) detectors / P. Delpierre;W. Beusch;L. Bosisio;C. Boutonnet;M. Campbell;E. Chesi;J.C. Clemens;M. Cohen-Solal;I. Debusschere;B. Dierickx;C. Enz;E. Focardi;F. Forti;M. Glaser;E. Heijne;L. Hermans;R. Hurst;A. Karar;F. Krummenacher;J.J. Jaeger;P. Jarron;F. Lemeilleur;F. Nava;C. Neyer;G. Ottaviani;R. Potheau;E. Quercigh;N. Redaelli;L. Rossi;D. Sauvage;G. Tonelli;G. Vanstraelen;G. Vegni;G. Viertel;J. Waisbard. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - ELETTRONICO. - 315:(1992), pp. 133-138. [10.1016/0168-9002(92)90693-X]
Development of silicon micropattern (pixel) detectors
FOCARDI, ETTORE;
1992
Abstract
In the framework of the CERN detector R&D effort in view of future high luminosity colliders, several pixel detector prototypes, both hybrid and monolithic, are being developed. A hybrid matrix of 16 × 64 pixels with a new readout cell is described here, and it will be first used for a test in a heavy-ion experiment. Preliminary results from the application of SOI processes on high resistivity silicon are also presented.
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