A new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. The fabrication methods and the results of the electrical evaluation of the SOI-MOSFET devices and of the detector structures fabricated in the bulk are reported. The leakage current of the high-resistivity PIN-diodes is kept of the order of 5 to 10 nA/cm2. The SOI preparation processes employed-SIMOX (separation by implantation of oxygen) and ZMR (zone melting recrystallization)-produce working electronic circuits, and appear to be compatible with the fabrication of detectors of suitable quality
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers / B. Dierickx;D. Wouters;G. Willems;A. Alaerts;I. Debusschere;E. Simoen;J. Vlummens;H. Akimoto;C. Claeys;H. Maes;L. Hermans;E.H.M. Heijne;P. Jarron;F. Anghinolfi;M. Campbell;F.X. Pengg;P. Aspell;L. Bosisio;E. Focardi;F. Forti;S. Kashigin;A. Mekkaoui;M.C. Habrard;D. Sauvage;P. Delpierre. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - ELETTRONICO. - 40:(1993), pp. 753-758. [10.1109/23.256656]
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
FOCARDI, ETTORE;
1993
Abstract
A new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. The fabrication methods and the results of the electrical evaluation of the SOI-MOSFET devices and of the detector structures fabricated in the bulk are reported. The leakage current of the high-resistivity PIN-diodes is kept of the order of 5 to 10 nA/cm2. The SOI preparation processes employed-SIMOX (separation by implantation of oxygen) and ZMR (zone melting recrystallization)-produce working electronic circuits, and appear to be compatible with the fabrication of detectors of suitable qualityI documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.