We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the monolithic integration on Si based microelectronics. Very bright and sharp individual exciton lines are resolved in the spectra and can be followed up to 150 K. The nature of quantum emitters of single photon pulses can be measured up to liquid nitrogen temperature by Hanbury Brown and Twiss interferometric correlations.
High temperature single photon emitter monolithically integrated on silicon / L. Cavigli;S. Bietti;N. Accanto;S. Minari;M. Abbarchi;G. Isella;C. Frigeri;A. Vinattieri;M. Gurioli;S. Sanguinetti. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 100:(2012), pp. 231112-1-231112-4. [10.1063/1.4726189]
High temperature single photon emitter monolithically integrated on silicon
CAVIGLI, LUCIA;ABBARCHI, MARCO;VINATTIERI, ANNA;GURIOLI, MASSIMO;
2012
Abstract
We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the monolithic integration on Si based microelectronics. Very bright and sharp individual exciton lines are resolved in the spectra and can be followed up to 150 K. The nature of quantum emitters of single photon pulses can be measured up to liquid nitrogen temperature by Hanbury Brown and Twiss interferometric correlations.
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