Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the high-energy physics community to face the hostile radiation environment where silicon pixel and microstrip detectors will operate in the Large Hadron Collider.

Radiation damage in silicon detectors for high-energy physics experiments / M. Bruzzi. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 48:(2001), pp. 960-971. [10.1109/23.958706]

Radiation damage in silicon detectors for high-energy physics experiments

BRUZZI, MARA
2001

Abstract

Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the high-energy physics community to face the hostile radiation environment where silicon pixel and microstrip detectors will operate in the Large Hadron Collider.
2001
48
960
971
M. Bruzzi
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/676821
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