The results of the model support the experimental available data. The correlation between the initial material parameters, temperature, irradiation and annealing history is established. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators or for space missions.
Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors / S. Lazanu;I. Lazanu;M. Bruzzi. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 514:(2003), pp. 9-17. [10.1016/j.nima.2003.08.078]
Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors
BRUZZI, MARA
2003
Abstract
The results of the model support the experimental available data. The correlation between the initial material parameters, temperature, irradiation and annealing history is established. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators or for space missions.I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.