We report on the growth and optical characterization by macro and micro photoluminescence measurements of high optical quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Si substrates. The quantum nanostructures show optical performances comparable to those achievable with the most advanced realized on GaAs substrates. The adopted growth procedures show also the possibility to fabricate the active layer maintaining a low thermal budget compatible with back-end integration of the fabricated materials on integrated circuits. We demonstrate the possibility to embed GaAs nanostructured devices such as intersubband detectors and single quantum emitters on Si substrates
High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates / S Bietti;L Cavigli;M Abbarchi;A Vinattieri;M Gurioli;A Fedorov; s Cecchi; F Isa; G Isella; S Sanguinetti. - In: PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS. - ISSN 1862-6351. - STAMPA. - 9:(2012), pp. 55-59. [10.1002/pssc.201100273]
High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates
CAVIGLI, LUCIA;ABBARCHI, MARCO;VINATTIERI, ANNA;GURIOLI, MASSIMO;
2012
Abstract
We report on the growth and optical characterization by macro and micro photoluminescence measurements of high optical quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Si substrates. The quantum nanostructures show optical performances comparable to those achievable with the most advanced realized on GaAs substrates. The adopted growth procedures show also the possibility to fabricate the active layer maintaining a low thermal budget compatible with back-end integration of the fabricated materials on integrated circuits. We demonstrate the possibility to embed GaAs nanostructured devices such as intersubband detectors and single quantum emitters on Si substratesI documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.