We present an experimental investigation of the binding energy of excitons confined in GaAs/AlGaAs self-assembled quantum dots. The peculiar epitaxial growth technique, the droplet epitaxy, allows the realization of strain free nanostructures. We show that the change in the quantum dot height is the main factor ruling the systematic evolution in the photoluminescence spectrum of single quantum dots. The changes in the level energy are interpreted as a balance between the attractive/repulsive Coulomb interaction field and correlation effects.
Binding Energy of Exciton Complexes in Self-Assembled GaAs Quantum Dots / M. Abbarchi; T. Kuroda; T. Mano; K. Sakoda; C. Mastrandrea; A. Vinattieri; M. Gurioli; T. Tsuchiya. - STAMPA. - 1399:(2011), pp. 465-466. (Intervento presentato al convegno 30th International Conference on the Physics of Semiconductors, ICPS-30 tenutosi a Seoul; South Korea nel 25-30 luglio 2010) [10.1063/1.3666455].
Binding Energy of Exciton Complexes in Self-Assembled GaAs Quantum Dots
ABBARCHI, MARCO;VINATTIERI, ANNA;GURIOLI, MASSIMO;
2011
Abstract
We present an experimental investigation of the binding energy of excitons confined in GaAs/AlGaAs self-assembled quantum dots. The peculiar epitaxial growth technique, the droplet epitaxy, allows the realization of strain free nanostructures. We show that the change in the quantum dot height is the main factor ruling the systematic evolution in the photoluminescence spectrum of single quantum dots. The changes in the level energy are interpreted as a balance between the attractive/repulsive Coulomb interaction field and correlation effects.
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