The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga(1-x)A(x)As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements (T-2) Of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.
Acoustic phonon dephasing in shallow GaAs/Ga1-xAlxAs single quantum wells / G. Cassabois; S. Ceccherini; Ph. Roussignol; F. Bogani; M. Gurioli; M. Colocci; R. Planel; V. Thierry-Mieg. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 2:(1998), pp. 218-221. [10.1016/S1386-9477(98)00047-2]
Acoustic phonon dephasing in shallow GaAs/Ga1-xAlxAs single quantum wells
BOGANI, FRANCO;GURIOLI, MASSIMO;COLOCCI, MARCELLO;
1998
Abstract
The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga(1-x)A(x)As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements (T-2) Of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.
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