The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga(1-x)A(x)As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements (T-2) Of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.

Acoustic phonon dephasing in shallow GaAs/Ga1-xAlxAs single quantum wells / G. Cassabois; S. Ceccherini; Ph. Roussignol; F. Bogani; M. Gurioli; M. Colocci; R. Planel; V. Thierry-Mieg. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 2:(1998), pp. 218-221. [10.1016/S1386-9477(98)00047-2]

Acoustic phonon dephasing in shallow GaAs/Ga1-xAlxAs single quantum wells

BOGANI, FRANCO;GURIOLI, MASSIMO;COLOCCI, MARCELLO;
1998

Abstract

The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga(1-x)A(x)As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements (T-2) Of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.
1998
2
218
221
G. Cassabois; S. Ceccherini; Ph. Roussignol; F. Bogani; M. Gurioli; M. Colocci; R. Planel; V. Thierry-Mieg
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/737527
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