We resolved a photoemission signal from a single self-organized GaAs/Al0.3Ga0.7As quantum dot (QD) with picosecond time resolution. ne emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.
Nonlinear carrier relaxation in a single GaAs self-organized quantum dot / T. Kuroda;S. Sanguinetti; F. Minami; M. Gurioli; K.Watanabe; N. Koguchi. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - STAMPA. - 737:(2003), pp. 87-92.
Nonlinear carrier relaxation in a single GaAs self-organized quantum dot
GURIOLI, MASSIMO;
2003
Abstract
We resolved a photoemission signal from a single self-organized GaAs/Al0.3Ga0.7As quantum dot (QD) with picosecond time resolution. ne emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.
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