The radiation hardness of silicon microstrip detectors has been investigated on full-size prototypes similar to the ones that will be installed in the forward tracker of CMS, where a very intense radiation environment is envisaged. Silicon detectors were exposed to a neutron beam with 3 different fluences up to 2.4 x 10(14) neutrons/cm(2), more than those foreseen at LHC after 10 years of operation. Degradation effects of the device properties regarding reverse current, depletion voltage, bulk and interstrip capacitance has been measured in laboratory as function of bias voltage, temperature and neutron fluence.
Characterization of neutron irradiated Silicon Microstrip Detectors / M. Lenzi;E. Catacchini;C. Civinini;R. D'Alessandro;M. Meschini. - In: NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS. - ISSN 0920-5632. - ELETTRONICO. - 78:(1999), pp. 663-669. [10.1016/S0920-5632(99)00621-0]
Characterization of neutron irradiated Silicon Microstrip Detectors
D'ALESSANDRO, RAFFAELLO;
1999
Abstract
The radiation hardness of silicon microstrip detectors has been investigated on full-size prototypes similar to the ones that will be installed in the forward tracker of CMS, where a very intense radiation environment is envisaged. Silicon detectors were exposed to a neutron beam with 3 different fluences up to 2.4 x 10(14) neutrons/cm(2), more than those foreseen at LHC after 10 years of operation. Degradation effects of the device properties regarding reverse current, depletion voltage, bulk and interstrip capacitance has been measured in laboratory as function of bias voltage, temperature and neutron fluence.
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