Operation of silicon avalanche detectors based on a Metal-Resistive layer-Semiconductor (MRS) structure is presented. Results refer to a new batch of detectors fabricated on a n-type substrate especially made to be used as light detecting elements of a scintillating fiber detector for high energy physics applications. These detectors are meant for weak light fluxes in the range 200-600 nm (called UV MRS). Measurements of gain, noise and quantum efficiency were performed and operation of the detector at different temperatures was also studied.

MRS detectors with high gain for registration of weak visible and UV light fluxes / Bacchetta, N.; Broz, D. Bisello F.; Catuozzo, M.; Gotra, Y.; Guschin, E.; Lacaita, A.; Malakhov, N.; Musienko, Y.; Nicolosi, ; Paccagnella, A.; Pace, Emanuele; Pantano, D.; Sadygov, Z.; Villoresi, P.; Zappa, F.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 387:(1997), pp. 225-230. [10.1016/S0168-9002(96)00995-3]

MRS detectors with high gain for registration of weak visible and UV light fluxes

PACE, EMANUELE;
1997

Abstract

Operation of silicon avalanche detectors based on a Metal-Resistive layer-Semiconductor (MRS) structure is presented. Results refer to a new batch of detectors fabricated on a n-type substrate especially made to be used as light detecting elements of a scintillating fiber detector for high energy physics applications. These detectors are meant for weak light fluxes in the range 200-600 nm (called UV MRS). Measurements of gain, noise and quantum efficiency were performed and operation of the detector at different temperatures was also studied.
1997
387
225
230
Bacchetta, N.; Broz, D. Bisello F.; Catuozzo, M.; Gotra, Y.; Guschin, E.; Lacaita, A.; Malakhov, N.; Musienko, Y.; Nicolosi, ; Paccagnella, A.; Pace, ...espandi
File in questo prodotto:
File Dimensione Formato  
1997 NIMA MRS detectors.pdf

Accesso chiuso

Tipologia: Versione finale referata (Postprint, Accepted manuscript)
Licenza: Tutti i diritti riservati
Dimensione 450.33 kB
Formato Adobe PDF
450.33 kB Adobe PDF   Richiedi una copia

I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/776475
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 17
  • ???jsp.display-item.citation.isi??? 20
social impact