Optoelectronic properties of CVD-diamond thin films grown on silicon have been investigated in order to study the applications of diamond as active material for UV and soft X-ray photodetectors. A comparison of electrical and photoelectrical properties between diamond films grown by hot filament and microwave plasma enhanced CVD techniques is reported, discussing the role of the film morphology and the device geometry.

Electro-optical properties of diamond thin films as photodetectors for the UV spectral region / Pace, Emanuele; Galluzzi, F.; Rossi, M. C.; Salvatori, S.; Marinelli, M.; Paroli, P.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 387:(1997), pp. 255-258. [10.1016/S0168-9002(96)01001-7]

Electro-optical properties of diamond thin films as photodetectors for the UV spectral region

PACE, EMANUELE;
1997

Abstract

Optoelectronic properties of CVD-diamond thin films grown on silicon have been investigated in order to study the applications of diamond as active material for UV and soft X-ray photodetectors. A comparison of electrical and photoelectrical properties between diamond films grown by hot filament and microwave plasma enhanced CVD techniques is reported, discussing the role of the film morphology and the device geometry.
1997
387
255
258
Pace, Emanuele; Galluzzi, F.; Rossi, M. C.; Salvatori, S.; Marinelli, M.; Paroli, P.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/776476
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