A new approach to the average efficiency improvement based on a combined 2-PAs architecture is presented. It uses discrete power control and dynamic supply voltage, which allows enhanced efficiency at low power level. It enables envelope tracking RF transmitter with higher average efficiency than classical approach. At 2.14 GHz CW we got an average efficiency of 42.5%, 6.1% better than the classical approach with equal peak P out = 35 dBm. The peak increment of PAE is 13.3% at 16.4 dB of power back-off.
HEMT GaAs/GaN power amplifiers architecture with discrete dynamic voltage bias control in envelope tracking RF transmitter for W-CDMA signals / Massimiliano Mercanti;Alessandro Cidronali;Stefano Maurri;Gianfranco Manes. - STAMPA. - (2011), pp. 9-12. (Intervento presentato al convegno IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2011) [10.1109/PAWR.2011.5725384].
HEMT GaAs/GaN power amplifiers architecture with discrete dynamic voltage bias control in envelope tracking RF transmitter for W-CDMA signals
CIDRONALI, ALESSANDRO
Membro del Collaboration Group
;MAURRI, STEFANO;MANES, GIANFRANCO
2011
Abstract
A new approach to the average efficiency improvement based on a combined 2-PAs architecture is presented. It uses discrete power control and dynamic supply voltage, which allows enhanced efficiency at low power level. It enables envelope tracking RF transmitter with higher average efficiency than classical approach. At 2.14 GHz CW we got an average efficiency of 42.5%, 6.1% better than the classical approach with equal peak P out = 35 dBm. The peak increment of PAE is 13.3% at 16.4 dB of power back-off.File | Dimensione | Formato | |
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