Performance of diamond-based photoconductive devices in the UV range Diam. Rel. Mater. 7 .

A detailed investigation of diam'ond-based UV planar photoconductors with interdigitated contacts is presented, analyzing in particular the influence of film morphology and texturing on device performance. Photoluminescence and photocurrent' spectroscopies reveal a strong correlation between structural defects and detector selectivity, whereas impurities affect photocurrent yield mainly in highly oriented materials. Responsivity measurements show that diamond-based devices give the highest UV visible discrimination in comparison to UV-enhanced Si- and GaN-based sensors. ["or 2 <225 nm, an almost linear photocurrent-light intensity relationship is observed, although, in a few cases, a superlinear dependence on illumination intensity is found. A theoretical model, capable of describing the observed field dependendence of photocurrent gain is presented, giving minority carriers lifetime and mobility in the range 0.1-1 ns and 10-300 cm'V- 1 s-1. respectively