Mathematical models describing interband tunneling in semiconductor heterostructure devices (superlattices) are discussed and compared to a model, here rigorously derived from the Schrodinger equation. The continuity equation for the probability density is also derived.
Titolo: | Rigorous derivation of Kane models for interband tunneling |
Autori di Ateneo: | |
Autori: | BORGIOLI, GIOVANNI; S. BIONDINI |
Anno di registrazione: | 2004 |
Titolo del libro: | Proceedings "Wascom 2003" 12th Conference on Waves and Stability in Continuous Media |
Titolo del congresso: | XII CONFERENCE ON WAVES AND STABILITY IN CONTINUOUS MEDIA (WASCOM 2003) |
Luogo del congresso: | VILLASIMIUS (CAGLIARI) |
Data del congresso: | 1-7 giugno 2003 |
Abstract: | Mathematical models describing interband tunneling in semiconductor heterostructure devices (superlattices) are discussed and compared to a model, here rigorously derived from the Schrodinger equation. The continuity equation for the probability density is also derived. |
Handle: | http://hdl.handle.net/2158/8092 |
Appare nelle tipologie: | 4a - Articolo in atti di congresso |
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