In this work we show the possibility to increase the optical quality of quantum dots grown by droplet epitaxy on Ge-on-Si substrates in terms of single dot emission linewidth, decay time and efficiency by operating on the As pressure during the crystallization step without increasing the thermal budget.
Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy / S. Bietti;L. Cavigli;S. Minari;S. Adorno;G. Isella;A. Vinattieri;M. Gurioli;S. Sanguinetti. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - STAMPA. - 378:(2013), pp. 497-500. [10.1016/j.jcrysgro.2012.12.078]
Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy
CAVIGLI, LUCIA;VINATTIERI, ANNA;GURIOLI, MASSIMO;
2013
Abstract
In this work we show the possibility to increase the optical quality of quantum dots grown by droplet epitaxy on Ge-on-Si substrates in terms of single dot emission linewidth, decay time and efficiency by operating on the As pressure during the crystallization step without increasing the thermal budget.
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