We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control.
Optical characterization of individual GaAs quantum dots grown with height control technique / F. Sarti;G. Muñoz Matutano;S. Bietti;A. Vinattieri;S. Sanguinetti;M. Gurioli. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 114:(2013), pp. 124301-1-124301-4. [10.1063/1.4821901]
Optical characterization of individual GaAs quantum dots grown with height control technique
SARTI, FRANCESCO;VINATTIERI, ANNA;GURIOLI, MASSIMO
2013
Abstract
We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control.File | Dimensione | Formato | |
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