The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates / F. Sarti;G. Muñoz Matutano;D. Bauer;N. Dotti;S. Bietti;G. Isella;A. Vinattieri;S. Sanguinetti;M. Gurioli. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 114:(2013), pp. 224314-1-224314-3. [10.1063/1.4844375]
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
SARTI, FRANCESCO;VINATTIERI, ANNA;GURIOLI, MASSIMO
2013
Abstract
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.
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