By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.
Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing / A. Vinattieri;F. Batignani;F. Bogani;M. Meneghini;G. Meneghesso;E. Zanoni;D. Zhu;C. J. Humphreys. - STAMPA. - 1583:(2014), pp. 282-286. (Intervento presentato al convegno International Conference on Defects in Semiconductors 2013 tenutosi a Bologna nel 21-26 July 2013) [10.1063/1.4865653].
Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing
VINATTIERI, ANNA;BOGANI, FRANCO;
2014
Abstract
By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.
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