Simulation and experimental studies on luminescent down-shifting (LDS) effect based on Si-quantum dots dispersed in a silicon dioxide matrix are performed. We used a transfer matrix approach to simulate the optical properties of our structure. In order to take into account the presence of the LDS-layer, we modify the incoming photon flux seen by the cell, considering the Si-quantum dots absorption and emission with a fixed quantum yield (QY). The estimation of the Si-quantum dots QY has been performed by photoluminescence decay time measurements. Using the method described in [4], we find a QY between 25% and 35%.
Silicon Nanocrystals for Downshifting Applications: A Preliminary Study / Sgrignuoli F; Jestin Y; Moser E; Ingenhoven P; Pucker G; Pavesi L. - ELETTRONICO. - (2012), pp. 375-378. (Intervento presentato al convegno EU PVSEC) [10.4229/27thEUPVSEC2012-1BV.8.9].
Silicon Nanocrystals for Downshifting Applications: A Preliminary Study
SGRIGNUOLI, FABRIZIO;
2012
Abstract
Simulation and experimental studies on luminescent down-shifting (LDS) effect based on Si-quantum dots dispersed in a silicon dioxide matrix are performed. We used a transfer matrix approach to simulate the optical properties of our structure. In order to take into account the presence of the LDS-layer, we modify the incoming photon flux seen by the cell, considering the Si-quantum dots absorption and emission with a fixed quantum yield (QY). The estimation of the Si-quantum dots QY has been performed by photoluminescence decay time measurements. Using the method described in [4], we find a QY between 25% and 35%.
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