We report on the structure and performance of 4H-SiC p+-n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm2 at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 105 was measured at 94-V reverse bias, confirming the avalanche multiplication working condition. The maximum responsivity value was measured at 270 nm, increasing from 0.06 A/W (QE = 29%) at 0-V bias to 0.10 A/W (QE of about 45%) at 30-V reverse bias.

Fully Planar 4H-SiC Avalanche Photodiode with Low Breakdown Voltage / Sciuto, A.*; Mazzillo, M.; Lenzi, P.; Di Franco, S.; Mello, D.; Barbarino, P.P.; Longo, G.; Cascino, S.; Santangelo, A.; Albergo, S.; Tricomi, A.; Starodubtsev, O.; Adriani, O.; D'Arrigo, G.. - In: IEEE SENSORS JOURNAL. - ISSN 1530-437X. - ELETTRONICO. - 17:(2017), pp. 4460-4465. [10.1109/JSEN.2017.2711643]

Fully Planar 4H-SiC Avalanche Photodiode with Low Breakdown Voltage

Lenzi, P.;Starodubtsev, O.;Adriani, O.;
2017

Abstract

We report on the structure and performance of 4H-SiC p+-n APDs fabricated in a fully planar technology. A dark current density lower than 10 nA/cm2 at 30-V reverse bias and a breakdown voltage of 88 V were observed. A gain as high as 105 was measured at 94-V reverse bias, confirming the avalanche multiplication working condition. The maximum responsivity value was measured at 270 nm, increasing from 0.06 A/W (QE = 29%) at 0-V bias to 0.10 A/W (QE of about 45%) at 30-V reverse bias.
2017
17
4460
4465
Sciuto, A.*; Mazzillo, M.; Lenzi, P.; Di Franco, S.; Mello, D.; Barbarino, P.P.; Longo, G.; Cascino, S.; Santangelo, A.; Albergo, S.; Tricomi, A.; Sta...espandi
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1120510
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