A Current-Source Sinusoidal Gate Driver for High-Frequency Applications

This paper proposes a new single-switch gate-driver circuit to drive a low-side power transistor at high frequencies with rapid turn-ON and turn-OFF transitions. The characteristics of the proposed topology include fast dynamic response, small energy storage requirements, and flexible design. Conventional gate drivers are used up to frequencies around 5 MHz and need at least two transistors. In this study, detailed description, design procedure, and power loss analysis of the proposed topology are presented. The introduced circuit exhibits fast switching speed and low gate-drive loss. Simulation and experimental results showing performance of the new topology are provided to validate the theory. The prototype of the gate driver for power transistors is designed, simulated, and tested at 20 MHz.