This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)(2))(2)(phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a gradual increase in the current density, which may be due to a crossover from direct tunneling to multi-step hopping.

Temperature-induced transport changes in molecular junctions based on a spin crossover complex / Poggini L.; Gonidec M.; Balasubramanyam R.K.C.; Squillantini L.; Pecastaings G.; Caneschi A.; Rosa P.. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7534. - STAMPA. - 7:(2019), pp. 5343-5347. [10.1039/c8tc06587j]

Temperature-induced transport changes in molecular junctions based on a spin crossover complex

Poggini L.;Squillantini L.;Caneschi A.;ROSA, GIOVANNA PAOLA MARIA
2019

Abstract

This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)(2))(2)(phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a gradual increase in the current density, which may be due to a crossover from direct tunneling to multi-step hopping.
2019
7
5343
5347
Poggini L.; Gonidec M.; Balasubramanyam R.K.C.; Squillantini L.; Pecastaings G.; Caneschi A.; Rosa P.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1177471
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