We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers / Ballabio, Andrea; Bietti, Sergio; Scaccabarozzi, Andrea; Esposito, Luca; Vichi, Stefano; Fedorov, Alexey; Vinattieri, Anna; Mannucci, Cosimo; Biccari, Francesco; Nemcsis, Akos; Toth, Lajos; Miglio, Leo; Gurioli, Massimo; Isella, Giovanni; Sanguinetti, Stefano. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - STAMPA. - 9:(2019), pp. 17529-17529. [10.1038/s41598-019-53949-x]

GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

Vinattieri, Anna;Biccari, Francesco;Gurioli, Massimo;
2019

Abstract

We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.
2019
9
17529
17529
Ballabio, Andrea; Bietti, Sergio; Scaccabarozzi, Andrea; Esposito, Luca; Vichi, Stefano; Fedorov, Alexey; Vinattieri, Anna; Mannucci, Cosimo; Biccari,...espandi
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1179643
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