hotoluminescence (PL) is one of the most widely diffused experimental techniques for the characterization of semiconductor nanostructures, in particular quantum wells (QWs), and for the study of their electronic properties. PL allows to study interesting intrinsic effects in QWs, like the exciton binding energy increase due to carrier localization, the homogeneous broadening of the exciton recombination line, the carrier–carrier interaction.

Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells / Sanguinetti S., Guzzi M., Gatti E., Gurioli M.. - STAMPA. - (2013), pp. 509-556. [10.1016/B978-0-444-59551-5.00012-1]

Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells

Gurioli M.
2013

Abstract

hotoluminescence (PL) is one of the most widely diffused experimental techniques for the characterization of semiconductor nanostructures, in particular quantum wells (QWs), and for the study of their electronic properties. PL allows to study interesting intrinsic effects in QWs, like the exciton binding energy increase due to carrier localization, the homogeneous broadening of the exciton recombination line, the carrier–carrier interaction.
2013
509
556
Sanguinetti S.; Guzzi M.; Gatti E.; Gurioli M.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1499004
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