Silicon p+/n/n+ junctions with nominal starting resistivity of 4-6 kOhmcm have been irradiated with a 1 MeV neutronequivalent fluence up to 4.1E14 cm-2. In order to investigate the changes in the shallow level concentrations induced by irradiation, low temperature Thermally Stimulated Current measurements have been performed. For fluences over 1e13 cm-2 a phosphorous removal is observed, probably due to the formation of the vacancy-phosphorous complex.

shallow levels analysis in irradiated silicon / E. BORCHI; BRUZZI M.; LI Z.; PIROLLO S.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 47:(2000), pp. 1474-1477. [10.1109/23.872999]

shallow levels analysis in irradiated silicon

BORCHI, EMILIO;BRUZZI, MARA;
2000

Abstract

Silicon p+/n/n+ junctions with nominal starting resistivity of 4-6 kOhmcm have been irradiated with a 1 MeV neutronequivalent fluence up to 4.1E14 cm-2. In order to investigate the changes in the shallow level concentrations induced by irradiation, low temperature Thermally Stimulated Current measurements have been performed. For fluences over 1e13 cm-2 a phosphorous removal is observed, probably due to the formation of the vacancy-phosphorous complex.
2000
47
1474
1477
E. BORCHI; BRUZZI M.; LI Z.; PIROLLO S.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/310585
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