Formation of ZnSe on Ag(111) by electrochemical atomic layer epitaxy.

ZnSe is an ideal candidate for optoelectronic devices. However, modern technology is quite demanding as to the quality of materials employed. The electrochemical atomic layer epitaxy (ECALE) method ensures good atomic-level control of thin film formation, as it is based on the alternated deposition of atomic layers of the elements making up the compound. The electrochemical conditions necessary to form ZnSe deposits of up to 35 Zn layers and 35 Se layers on Ag(111) by ECALE are described here. The 1:1 stoichiometric ratio of Zn to Se suggests that ZnSe is formed. A miniaturized electrochemical cell is also described.