The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.
Proceedings of the 3rd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Hotel Raffaello, Firenze, Italy, June 28-30, 2000 / E.Borchi; M. Bruzzi. - STAMPA. - (2002), pp. V-VI.
Proceedings of the 3rd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Hotel Raffaello, Firenze, Italy, June 28-30, 2000
BORCHI, EMILIO;BRUZZI, MARA
2002
Abstract
The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.
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