The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.
Proceedings of the 6th International Conference on Radiation Effects on Semiconductor Materials, Detectors, and Devices, Florence, OCT 10-13, 2006 / E. Borchi; M. Bruzzi; D. Menichelli; E. Pace. - STAMPA. - (2007).
Proceedings of the 6th International Conference on Radiation Effects on Semiconductor Materials, Detectors, and Devices, Florence, OCT 10-13, 2006
BORCHI, EMILIO;BRUZZI, MARA;MENICHELLI, DAVID;PACE, EMANUELE
2007
Abstract
The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.
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