The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.

Proceedings of the 5th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices / E. Borchi; M. Bruzzi. - STAMPA. - (2005).

Proceedings of the 5th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices

BORCHI, EMILIO;BRUZZI, MARA
2005

Abstract

The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.
2005
E. Borchi; M. Bruzzi
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/342394
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