Proceedings of the 5th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices

Borchi, Emilio; Bruzzi, Mara

The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.

trova@unifi

Titolo:	Proceedings of the 5th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices
Autori di Ateneo:	BORCHI, EMILIO BRUZZI, MARA
Autori:	BORCHI, EMILIO; BRUZZI, MARA
Anno di registrazione:	2005
Abstract:	The Conference is a forum for discussions about detector development. Topics include tracking performance of heavily irradiated silicon devices, radiation hardening technologies, microscopic defect analysis of irradiated semiconductor materials. The discussion of the radiation effects on wide-band gap materials as diamond, GaAs, GaN, SiC, CZT is also encouraged, in view of applications in astrophysics experiments, particle physics, radiation dosimetry, radiological applications.
Handle:	http://hdl.handle.net/2158/342394
Appare nelle tipologie:	7a - Curatela

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