Silicon p+n junctions irradiated with neutron and proton fluences in the range 5x10^11- 4x10^15 cm^(-2) and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration Nt of the main radiation-induced deep traps (Et ~0.44- 0 .54 eV) is found to increase proportionally to fluence, achieving values up to 5x10'^15 cm(-3) and a mobility saturation at l00cm^2/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.

Comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors / U. Biggeri; E. Borchi; M. Bruzzi; V. Eremin; C. Leroy; Z. Li; D. Menichelli; S. Pirollo; S. Sciortino; E. Verbitskaya. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 45:(1998), pp. 597-601.

Comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

BIGGERI, UGO;BORCHI, EMILIO;BRUZZI, MARA;MENICHELLI, DAVID;PIROLLO, SILVIA;SCIORTINO, SILVIO;
1998

Abstract

Silicon p+n junctions irradiated with neutron and proton fluences in the range 5x10^11- 4x10^15 cm^(-2) and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration Nt of the main radiation-induced deep traps (Et ~0.44- 0 .54 eV) is found to increase proportionally to fluence, achieving values up to 5x10'^15 cm(-3) and a mobility saturation at l00cm^2/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.
1998
45
597
601
U. Biggeri; E. Borchi; M. Bruzzi; V. Eremin; C. Leroy; Z. Li; D. Menichelli; S. Pirollo; S. Sciortino; E. Verbitskaya
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/347375
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