We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10^14 cm^(-2) the characterisation ofn-on-p and p-on-n MCz Si sensors with the C–V method show a decrease ofthe full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role ofthermal donors in Czochralski Si. No evidence ofthermal donor activation was observed in n-type MCz Si detectors ifcontact sintering was performed at a temperature lower than 380 °C and the final passivation oxide was omitted.
Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon / M. Bruzzi; D. Bisello; L. Borrello; E. Borchi; M. Boscardin; A. Candelori; D. Creanza; G.-F. Dalla Betta; M. Depalma; S. Dittongo; E. Focardi; V. Khomenkov; A. Litovchenko; A. MacChiolo; N. Manna; D. Menichelli; A. Messineo; S. Miglio; M. Petasecca; C. Piemonte; G.U. Pignatel; V. Radicci; S. Ronchin; M. Scaringella; G. Segneri; D. Sentenac; C. Tosi; N. Zorzi. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 552:(2005), pp. 20-26. [10.1016/j.nima.2005.06.001]
Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon
BRUZZI, MARA;BORCHI, EMILIO;FOCARDI, ETTORE;MENICHELLI, DAVID;MIGLIO, STEFANIA;SCARINGELLA, MONICA;TOSI, CARLO;
2005
Abstract
We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10^14 cm^(-2) the characterisation ofn-on-p and p-on-n MCz Si sensors with the C–V method show a decrease ofthe full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role ofthermal donors in Czochralski Si. No evidence ofthermal donor activation was observed in n-type MCz Si detectors ifcontact sintering was performed at a temperature lower than 380 °C and the final passivation oxide was omitted.
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