A method for the analysis of deep level spectra in semiconductors has been developed, which enables the determination of different trap signatures even when a large number of spectral peaks overalp. This procedure invokes the simultaneous analysis of thermally stimulated currents and deep level transient spectroscopy spectra by the numerical solution of the integral equations linking the full deep level populations to the measured signals. The method has been tested for a set of neutron irradiated silicon samples, giving very satisfactory results.

Correlated analysis of deep level transient spectroscopy and thermally stimulated current spectra / David Menichelli; Emilio Borchi. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 93(2003), pp. 390-395. [10.1063/1.1527219]

Correlated analysis of deep level transient spectroscopy and thermally stimulated current spectra

MENICHELLI, DAVID;BORCHI, EMILIO
2003

Abstract

A method for the analysis of deep level spectra in semiconductors has been developed, which enables the determination of different trap signatures even when a large number of spectral peaks overalp. This procedure invokes the simultaneous analysis of thermally stimulated currents and deep level transient spectroscopy spectra by the numerical solution of the integral equations linking the full deep level populations to the measured signals. The method has been tested for a set of neutron irradiated silicon samples, giving very satisfactory results.
93
390
395
David Menichelli; Emilio Borchi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2158/359059
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