The radiation hardness of silicon p+ n junctions used to detect particles in high energy physics was investigated by making electrical and thermally stimulated current (TSC) spectroscopy measurements before and after irradiation with fast neutron fluences ranging from 5 x 10(11) to 5 x 10(13) neutrons/cm2. Leakage current and capacitance vs reverse voltage and capacitance vs the test signal frequency of the capacitance meter were measured. The main energy levels introduced in the detector bulk by irradiation were measured with the TSC technique and the concentrations of the associated traps were calculated. A peak dependent on the filling voltage impulse applied during measurement was observed in the most irradiated samples.
Electrical and spectroscopic analysis of neutron-irradiated silicon detectors / A. Baldini;E. Borchi;M. Bruzzi;P. Spillantini. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 315:(1992), pp. 182-187. [10.1016/0168-9002(92)90701-5]
Electrical and spectroscopic analysis of neutron-irradiated silicon detectors
BORCHI, EMILIO;BRUZZI, MARA;
1992
Abstract
The radiation hardness of silicon p+ n junctions used to detect particles in high energy physics was investigated by making electrical and thermally stimulated current (TSC) spectroscopy measurements before and after irradiation with fast neutron fluences ranging from 5 x 10(11) to 5 x 10(13) neutrons/cm2. Leakage current and capacitance vs reverse voltage and capacitance vs the test signal frequency of the capacitance meter were measured. The main energy levels introduced in the detector bulk by irradiation were measured with the TSC technique and the concentrations of the associated traps were calculated. A peak dependent on the filling voltage impulse applied during measurement was observed in the most irradiated samples.
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