Measurements of radiation induced defects for high resistivity silicon detectors irradiated with fast neutrons have been performed using the Thermally Stimulated Current technique approximately one year self annealing after the irradiation. Energy levels inside the band gap and trap concentrations have been measured at different depletion depths to analyse the defect profile inside the silicon bulk. Up to 17 traps have been observed, which energy levels seem to be independent on the depth inside the bulk. The concentration of the deeper levels have found to increase by measuring deeply inside the junction.
Deep levels profile in neutron irradiated silicon detectors / U. Biggeri;E. Borchi;M. Bruzzi;S. Lazanu. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 360:(1995), pp. 134-136. [10.1016/0168-9002(94)01711-5]
Deep levels profile in neutron irradiated silicon detectors
BORCHI, EMILIO;BRUZZI, MARA;
1995
Abstract
Measurements of radiation induced defects for high resistivity silicon detectors irradiated with fast neutrons have been performed using the Thermally Stimulated Current technique approximately one year self annealing after the irradiation. Energy levels inside the band gap and trap concentrations have been measured at different depletion depths to analyse the defect profile inside the silicon bulk. Up to 17 traps have been observed, which energy levels seem to be independent on the depth inside the bulk. The concentration of the deeper levels have found to increase by measuring deeply inside the junction.I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.